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IRFM240 2N7219 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) N-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES * N-CHANNEL MOSFET * HIGH VOLTAGE 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 200V 18A 0.18 1 2 3 20.07 (0.790) 20.32 (0.800) 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC * HERMETIC ISOLATED TO-254 PACKAGE 3.81 (0.150) BSC * ELECTRICALLY ISOLATED TO-254AA - Isolated Metal Package Pin 1 - Drain Pin 2 - Source Pin 3 - Gate ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VGS ID IDM PD IAR dv / dt RJC RJA TJ , TSTG TL 1) 2) Gate - Source Voltage Continuous Drain Current @ VGS = 10V , TC = 25C @ VGS = 10V , TC = 100C Pulsed Drain Current Max. Power Dissipation @ TC = 25C Linear Derating Factor Avalanche Current 1 Peak Diode Recovery 2 Thermal Resistance Junction - Case Thermal Resistance Junction - Ambient Operating Junction and Storage Temperature Range Lead Temperature (1.6mm from case for 10s) 20V 18A 11A 72A 125W 1.0W / C 18 5.0V / ns 1.0C / W 48C / W -55 to 150C 300C VDD = 50V , Starting TJ = 25C , L 1.3mH , VGS = 10V , Peak IL = 18A ISD 18A , di/dt 150A / S , VDD 200V , TJ 150C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4145 Issue 1 IRFM240 2N7219 ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise stated) Parameter BVDSS TJ RDS(on) STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Breakdown Voltage Static Drain - Source On-State Resistance 2 Test Conditions VGS = 0 ID = 1mA VGS = 10V VGS = 10V VDS = VGS 2 Min. 200 Typ. Max. Unit V ID = 1mA BVDSS Temperature Coefficient of Reference to 25C ID = 11A ID = 18A ID = 250A IDS = 11A VDS = 160V TJ = 125C VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V ID = 18A VDS = 100V VDD = 100V ID = 18A RG = 9.1 VGS = 10V 2.0 6.1 0.29 0.18 0.25 4.0 25 250 100 -100 1300 400 130 60 10.6 37.6 20 105 58 67 18 72 V / C V S( A nA )( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton LD LS Forward Transconductance VDS 15V VGS = 0 Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn- On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current Pulse Source Current 1 pF nC ns SOURCE - DRAIN DIODE CHARACTERISTICS A V ns C Diode Forward Voltage 2 Reverse Recovery Time 2 Reverse Recovery Charge Forward Turn-On Time 2 IS = 18A VGS = 0 IF = 18A TJ = 25C TJ = 25C Negligible 4.0 4.0 1.5 500 5.3 di / dt 100A/s VDD 50V PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from drain lead (6mm / 0.25in from package) to Internal Source Inductance source lead (6mm / 0.25in from package). nH 1) Repetitive Rating - Pulse width limited by Maximum Junction Temperature 2) Pulse Test: Pulse Width 300s, 2%. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 4145 Issue 1 |
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